Tommy Liu builds a vehicle-mounted particulate matter monitoring system powered from harvested wind energy and an integrated ...

Nexperia announced the addition of two 1200 V 20 A silicon carbide (SiC) Schottky diodes to its continuously expanding portfolio of power electronics components. The PSC20120J and PSC20120L have been ...

Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...

If the car battery terminals are reverse connected during a jump start, vehicle upkeep, or repair, components in the associated automotive electronics modules may be damaged if they cannot handle the ...

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode. Designed for industrial use, the CoolGaN G5 ...

Diodes Incorporated has expanded its SiC product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC Schottky diodes. Rated at 4A, 6A, 8A, 10A, and 12A, the ...

Rated at 4A, 6A, 8A, 10A, and 12A, the DSCxxA065LP series is housed in the ultra-thermally efficient T-DFN8080-4 package and is designed for high-efficiency power switching applications, such as DC to ...

The new SiC Schottky diodes from Diodes Incorporated deliver industry-leading FOM and system efficiency. Diodes Incorporated (Diodes) has announced an expansion of its silicon carbide (SiC) product ...

40 A to 240 A Dual-Diode and Single Phase Bridge Devices Offer Low Forward Voltage Drop Down to 1.36 V and QC Down to 56 nC MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc.

Graded layer in AlN Schottky barrier diodes increases their maximum current density by three orders of magnitude Engineers from North Carolina State University and Adroit Materials have raised the bar ...