New research from the WISE group (Wearable, Intelligent, Soft Electronics) at The University of Hong Kong (HKU-WISE) has ...
Abstract: The destructive testing for reliability analysis at high-power microwave (HPM) in the GaAs/InGaP hetero-junction bipolar transistor (HBT) has been rarely investigated although it has a ...
Abstract: The conventional latch-up model defines triggering current as the means to forward a pn junction, activating one parasitic bipolar transistor of the input-output (IO) transistor first.