Semiconductor Engineering

Oxides Bring Low Leakage Transistors To Leading-Edge Memories

They also would like to use low-leakage transistors to reduce the refresh power demands of large memory arrays. Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable ...
Semiconductor Engineering

The Uncertain Future Of In-Memory Compute

Experts at the Table — Part 2: Semiconductor Engineering sat down to talk about AI and the latest issues in SRAM with Tony Chan Carusone, chief technology officer at Alphawave Semi; Steve Roddy, chief ...
EDN

nvSRAMs eclipse battery-backed memory

Ever improving non-volatile static random access memories (nvSRAMs) are here to address the shortcomings of battery-backed SRAMs. Providing a significant power management advantage, these parts ...
Nasdaq

MoSys Launches New QUAZAR QPR Family of Low Cost, Quad Partition Rate SRAM Memory ICs Targeted for Accelerating INTEL and XILINX FPGA Designs

QDR Level Performance - Replaces up to 8X QDRs - Capacities of 576Mb or 1Gb in Single Device Costing Less Than $200 in Volume Quantities SAN JOSE, CA / ACCESSWIRE / July 15, 2020 / MoSys, Inc. (NASDAQ ...
EDN

Mosys says new SRAM core quadruples memory density

MoSys Inc. today is unveiling an intellectual property core that it claims willquadruple the memory density possible using conventional embedded SRAMtechnology without breaking the chip's space or ...
Electronic Design

Memory Motivates Cell-Phone Growth

Traditional memory solutions are now being replaced by architectures like NOR+SRAM+NAND and NAND+LPSDRAM. As cellular phones incorporate the multi-function capabilities that enable web-access and ...