EDN

Hybrid emitter-switched transistor suits very high power applications

The hybrid STE59DE100 ESBT (emitter-switched bipolar transistor) STE50DE100 has a collector-source voltage of 1 kV and collector currents as high as 50A. The product combines bipolar and MOSFET ...
EDN

SCR topology transmogrifies into BJT two-wire precision current source

An SCR topology transmogrifies into BJT two-wire precision current source with a self-resetting fault-current limiter.
pv magazine International

Cadmium telluride solar cell based on indium gallium oxide emitter achieves 17.2%

Developed by the University of Toledo, the cell achived the highest efficiency ever reported for flexible cadmium telluride solar cells to date. The device reached an open-circuit voltage of 861 mV, a ...
Nature

Silicon-Germanium Heterojunction Bipolar Transistors and On-Wafer Measurement Techniques

Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) have emerged as a cornerstone in high-frequency electronics owing to their enhanced carrier mobility and reduced noise. The integration ...
Electronic Design

Hybrid Emitter-Switched Transistor Targets High-Power Applications

STMicroelectronics has introduced a hybrid emitter-switched bipolar transistor (ESBT) for use in welding equipment, induction heating systems and power factor correction for audio amplifiers. The ...