The system enables precise measurement of current and voltage in high-power semiconductor testing, aiming to improve ...
Gallium nitride (GaN) transistors have certainly increased power system performance and lowered the relative cost of components. But when it comes to quality and reliability, how does GaN stack up ...
Northwestern University researchers have developed new transistors which are currently tested on the International Space Station (ISS) to see how they react to cosmic radiation. These transistors, ...
There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...
Herein, wafer-scale 8-nm films of Sn-doped gallium oxide (Ga 2 O 3) were fabricated via physical vapor deposition at room temperature. Using these films, 8-nm Sn-doped Ga 2 O 3 field-effect ...
GeneSiC’s SiC-based 1200 V/220 mΩ Super Junction Transistors (SJTs) feature high temperature (> 300 °C) operation capability, ultra-fast switching transitions ( 15 ns), extremely low losses, and a ...
Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed ...
Semiconducting CNTs possess several advantages over traditional silicon, including higher carrier mobility and better electrostatic control at nanoscale dimensions. These properties make them ...
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