The system enables precise measurement of current and voltage in high-power semiconductor testing, aiming to improve ...

There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...

The need to improve electronic circuits’ efficiency, to follow the ongoing trend to lower supply voltages and higher operating currents and to deal with multiple supply voltages has lead to certain ...

Integrated circuit (IC) sizes continue to grow as they meet the compute requirements of cutting-edge applications such as artificial intelligence (AI), autonomous driving, and data centers. As design ...

A tough challenge for test engineers is explored in terms of test methods, pitfalls, and measurement errors. For the test engineer, RF and microwave power amplifier testing imposes unique challenges.

Herein, wafer-scale 8-nm films of Sn-doped gallium oxide (Ga 2 O 3) were fabricated via physical vapor deposition at room temperature. Using these films, 8-nm Sn-doped Ga 2 O 3 field-effect ...

STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, today announced new radio-frequency (RF) power transistors built using an advanced ...

Semiconducting CNTs possess several advantages over traditional silicon, including higher carrier mobility and better electrostatic control at nanoscale dimensions. These properties make them ...

Scientists from France’s CEA-Ines developed a 400 W micro-inverter with a power density of 1.1 kW/L and an efficiency of 97%. The device utilizes GaN 600V diodes and power transistors developed by CEA ...

Shrinking chips are hitting a wall. Traditional transistors, the workhorses of modern electronics, are struggling to switch faster without guzzling power. A rival design, the tunnel field-effect ...