Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
SiC MOSFETs are usually susceptible to damage as a result of short-circuiting events because of the fast switching speeds and low on-state resistance. 3 A team of researchers affiliated with the ...
Short circuits in the tracks, points or wiring are almost inevitable when building or operating a model railway. Although transformers for model systems must be protected against short circuits by ...
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