X-Fab Silicon Foundries has added 375V power transistors to the devices available from its 180nm deep trench isolation BCD-on-SoI platform chip fab. The second generation of its XT018 super-junction ...

For years—decades, in fact—the NMOS transistor world has been on cruise control. NMOS is naturally faster and its performance has scaled better than PMOS. PMOS has had a cost advantage. But lately, it ...

Designers of electronics and communications systems are constantly faced with the challenge of integrating greater functionality on less silicon area. Many of the system blocks – such as power ...

X-FAB has added three new low-noise transistors to its 180nm process node: a 1.8 V low-noise NMOS, a 3.3 V low-noise NMOS and a 3.3 V low-noise PMOS – all of which offer drastically reduced flicker ...

TMSC's HPL NMOS and PMOS transistors, as seen in the Kintex-7 FPGA, are shown below. The two transistors are made using a gate-last process, where the TiN/HfO2/oxide gate dielectric is first deposited ...

—The development of a process flow capable of demonstrating functionality of a monolithic complementary FET (CFET) transistor architecture is complex due to the need to vertically separate nMOS and ...

Even as industry moves into the era of the high k metal gate (HKMG) and FinFET transistor, chipmakers continue to seek ways to improve device performance. One of the latest advances and the subject of ...

The company offers a glimpse at how it envisions upgrading chip designs after 2025. To create even faster CPUs, Intel is researching stacking “multiple” transistors on top of each to raise the chip ...