Santa Clara, Calif. — IXYS Corp. has released a new generation of fast 300-V insulated gate bipolar transistors (IGBTs) built with the IXYS HDMOS IGBT process. The five new products — the IXGH42N30C3, ...
Given the many varieties of advanced power devices available, choosing the right power device for an application can be a daunting task. For solar inverter applications, it is well known that ...
For the PDF version of this article, including diagrams and/or equations, click here. The latest trench IGBTs optimized for appliance-motor controls display lower V CE ON and lower switching loss than ...
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