Denied access to compound chip technology by foreign powers, Indian scientists did what they always do: Make in India ...
Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven ...
Power semiconductor upstart Transphorm said it has landed a contract with the U.S. Energy Department’s Advanced Research Projects Agency-Energy (ARPA-E) to build a better bidirectional switch out of ...
Gallium nitride (GaN) is a wide-bandgap semiconductor material, which, compared with silicon, exhibits outstanding characteristics and performance, including high efficiency, high switching rate, ...
TORRANCE, Calif. and HYDERABAD, India, Dec. 8, 2025 /PRNewswire/ -- Navitas Semiconductor (NVTS) Corporation (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and ...
TORRANCE, Calif. and HYDERABAD, India, Dec. 08, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (NVTS) Corporation (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) ...