KIOXIA America, Inc. today announced that it has begun shipping evaluation samples(1) of embedded flash memory compatible with the next-generation UFS standard, UFS 5.0, which is currently being ...
The time has come for flash memory solutions. Here, Venkat, Vice President of Product Management at Violin Memory, discusses where and when flash is superior to compete storage methods.
IM doubles down on long-term eMMC reliability as others exit the market With our new low-density eMMC portfolio, ...
TOKYO--(BUSINESS WIRE)--Toshiba Memory Corporation, the world leader in memory solutions, today announced that it has begun shipping samples of embedded NAND flash memory products for automotive ...
UFS 5.0 flash storage will power net-gen smartphones and other mobile devices, and will deliver read/write performance of around 10.8 GB/s.
Micron introduced a serial NAND flash memor, providing embedded applications with the flexibility to easily upgrade their storage capacity. With chip density starting at 1 gigabit (Gb), Micron's ...
SAN JOSE, Calif.--(BUSINESS WIRE)--KIOXIA America, Inc. today announced that it has started sampling 1 new Automotive Universal Flash Storage 2 (UFS) Ver. 3.1 embedded flash memory devices. The new ...
Non-volatile memory is an important component in a wide range of high-performance embedded applications. Especially, many consumer, industrial, and medical applications need increased re-writability ...
The company plans to showcase the latest advances made to the company's s BiCS FLASH 3D flash memory, including the newly announced CD8P data center SSDs. KIOXIA has been developing flash memory ...
NOR flash memory is evolving much in the same way as its cousin, NAND flash: 3D NOR is on the horizon and poised to boost memory densities and dramatically enhance designs. Evolving electronic systems ...
Octal flash memory, or octal data transfer interface, utilizes eight data lines for input and output operations, resulting in significantly higher data transfer rates compared to serial, dual, and ...
Shrinking ferroelectric tunnel junctions can significantly boost their performance in memory devices, as reported by ...