A p-n junction is an interface or boundary between p-type and n-type semiconductor materials within a single semiconductor crystal. The positive (p) side contains excess holes, while the negative (n) ...
Silicon carbide (SiC) is a wide-bandgap semiconductor material utilized in high-power, high-temperature, and high-frequency electronic devices. 4H-SiC substrates have distinct characteristics, ...
Joint effort enhances the performance and reliability of next-generation data centers with cutting-edge substrate technology SEMCO's collaboration with AMD focuses on meeting the unique challenges of ...
Interposers and substrates are undergoing a profound transformation from intermediaries to engineered platforms responsible for power distribution, thermal management, high-density interconnects, and ...
The chip industry is racing to develop glass for advanced packaging, setting the stage for one of the biggest shifts in chip materials in decades — and one that will introduce a broad new set of ...
Samsung Electro-Mechanics said that Executive Director Hwang Chi-won (head of the package development team) received a presidential citation at the 20th Electronics and IT Day awards ceremony held on ...
Samsung Electro-Mechanics is gaining an edge in the industry's race to commercialize glass core substrates, a next-generation semiconductor packaging material, by agreeing to establish a joint venture ...
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