Santa Clara, CA and Kyoto, Japan, Nov. 07, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new automotive-grade AEC-Q101 qualified 4th Generation 1200V IGBTs that combine class-leading[1] ...
Rohm Semiconductor has introduced the RGWxx65C series of hybrid IGBTs with an integrated 650-V silicon carbide (SiC) Schottky barrier diode that is qualified under the AEC-Q101 automotive reliability ...
Santa Clara, CA and Kyoto, Japan, Dec. 06, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced an expansion to their SPICE model lineup for the LTspice ®[1] circuit simulator, increasing its ...
The AOxxB60D 600−V insulated gate bipolar transistors (IGBTs) use a patent pending AlphaIGBT technology that combines a unique cell and vertical device structure to offer best-in-class conduction (VCE ...
After decades of domination by silicon, silicon carbide (SiC) is replacing it as the gold standard in high-voltage power electronics, including in traction inverters at the heart of electric vehicles ...
- Contributing to Higher Efficiency in Automotive Electric Compressors and Inverters for Industrial Equipment - KYOTO, Japan, Nov. 12, 2024 /PRNewswire/ -- ROHM Co., Ltd. has developed ...
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